
Photo Transistor
Technical Specifications
Component Description
High‑Sensitivity Photo Transistor – Swift Light Sensing in Miniature Package
This photo transistor offers rapid optical detection with a broad spectral response, achieving high linearity and excellent signal-to-noise characteristics. Designed for applications ranging from ambient light sensing to optical communication and infrared monitoring, it converts incident photons directly into a proportional electric current, enabling precise and low‑power signal conditioning within compact PCB footprints.
With a fast rise time and low dark current, the device delivers reliable performance in head‑on or diffuse illumination scenarios. Its built‑in current‑to‑voltage conversion paths simplify interface design, making it ideal for hobbyists, embedded engineers, and industrial automation systems that demand fast, accurate light detection in a small, rugged package.
- Key Spec 1: Spectral range 400 – 940 nm (visible to near‑IR)
- Key Spec 2: Transimpedance gain up to 1 kΩ, ±1 % tolerance
- Key Spec 3: Rise time < 10 µs, dark current < 200 pA at 25 °C
- Common Use Case: Light‑controlled switch for LED dimming, IR remote‑sensor input, or photometric calibration in portable devices
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