Photodiode

High‑Speed, High‑Pulsed Photodiode for Precision Light Sensing

Designed for demanding optical measurement and communication systems, this photodiode offers a broad spectral response from 350 nm to 1100 nm with exceptional linearity and low noise. Its intrinsic avalanche structure delivers rapid rise times (<10 ns) and a high responsivity of up to 0.65 A/W at 650 nm, making it ideal for laser ranging, Li‑DAR, and high‑speed data links.

Constructed in a robust TO‑220 package and fully characterized across the -40 °C to +85 °C range, the device ensures reliable performance in harsh industrial and automotive environments. The low dark current (<100 pA) and temperature‑stable breakdown voltage enable precise signal conditioning with minimal amplification.

• Key Spec 1: Spectral range 350–1100 nm, peak responsivity 0.65 A/W (650 nm)
• Key Spec 2: Rise time <10 ns, fall time <12 ns, bandwidth <100 MHz
• Key Spec 3: Maximum reverse bias 40 V, dark current <100 pA at 25 °C
• Common Use Case: Laser ranging, Li‑DAR, high‑speed optical communication, and photometric calibration